SSD, SAMSUNG, 990 EVO Plus, 4TB, M.2, PCIe Gen5, NVMe, TLC, Write speed 6300 MBytes/sec, Read speed 7250 MBytes/sec, 2.38mm, TBW 2400 TB, MZ-V9S4T0BW
Populārs
- Ražotājs: SAMSUNG
- Modelis: MZ-V9S4T0BW
- EAN: 8806095575667
- Pieejamība: 20
Nosaukums:
SAMSUNG MZ-V9S4T0BW
853,28€
Bez PVN: 705,19€
- Produktu apskats
- Specifikācija
- Atsauksmes (0)
Specifikācijas
Galvenie parametri
Diska tips
SSD
Ietilpība
4 TB
Formas faktors
M.2
Saskarne
PCIe 4.0 NVMe
Lasīšanas ātrums
7250 MB/s
Rakstīšanas ātrums
6300 MB/s
Atmiņas tips (NAND)
TLC
Vidējais laiks starp atteicēm (MTBF)
1 500 000 h
Specification
Name
SSD PCIE G5 M.2 NVME 4TB/990EVOPLUS MZ-V9S4T0BW SAMSUNG
Specifikācija
DevSlp (device sleep) support
Yes
Hardware encryption
Yes
M.2 SSD size
2280 (22 x 80 mm)
NVMe version
2.0
Power consumption DevSlp (device sleep)
5
Product Net Weight
0.009
Random read (4KB)
1050000
SSD Capacity
4000
Summary
Samsung MZ-V9S4T0. SSD capacity: 4 TB, SSD form factor: M.2, Read speed: 7250 MB/s, Write speed: 6300 MB/s, Component for: PC
Unit Calculated Volume
0.0006384
Unit Depth
14.5
Unit Height
2
Unit Width
10
Units per Shipping Box
10
Atmiņa
Atmiņas tips
V-NAND TLC
Atmiņas ierīce
NVMe
Yes
SSD form factor
M.2
SSD series
990 EVO Plus
Porti
Interface
PCI Express 4.0
Specifikācijas
Augstums
80.15
Component for
PC
Dziļums
2.38
Mean time between failures (MTBF)
1500000
Model
MZ-V9S4T0BW
Modeļa nosaukums
MZ-V9S4T0
Operating shock
1500
Operating temperature (T-T)
0 - 70
Operating voltage
3.3
Package depth
100
Package height
22
Package weight
70
Package width
148
Platums
80.15
Power consumption (idle)
0.06
Power consumption (read)
5.5
Power consumption (write)
4.8
Random write (4KB)
1400000
Read speed
7250
S.M.A.R.T. support
Yes
Security algorithms
256-bit AES
TRIM support
Yes
Weight
9
Write speed
6300
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